Thermal oxidation rates and resulting optical constants of Al_0.83In_0.17N films grown on GaN

Thermal Oxidation Times Effect on Structural and Morphological Properties of Molybdenum Oxide Thin Films Grown on Quartz Substrates

Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...

Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show...

Wet thermal oxidation of GaAs and GaN

thermal oxidation times effect on structural and morphological properties of molybdenum oxide thin films grown on quartz substrates

Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN

Titanium dioxide sTiO2, with the rutile structured was grown on s0001d oriented GaN and s0001d Al0.33Ga0.67N/GaN heterostructure field effect transistor sHFETd structures by molecular beam epitaxy. X-ray diffraction showed s100dTiO2 i s0001dGaNsAlGaNd and f001gTiO2 i k112̄0lGaNsAlGaNd with three rotational variants of the TiO2. Transmission electron microscopy of 50 nm thick TiO2 films on GaN an...